在SiC衬底上生长了碳硅共掺杂p型AlN晶体, 通过X射线衍射、X射线光电子能谱(XPS)、光致发光(PL)光谱、霍尔测试对碳硅共掺杂p型AlN晶体的结构、光学及电学性能进行了综合研究。通过XPS测试分析(尤其是对样品中Si 2p和C 1s的XPS谱分析)发现, 样品中C替代N成为受主, 而Si替代Al成为施主。样品的PL谱主要包括两个特征发射峰, 分别来自于C、Si在AlN中形成的复合物VN-CN 和CN-SiAl。

p-type AlN crystals by C and Si codoping were grown on SiC substrates by the sublimation method. The structural, optical and electronic properties of the samples were investigated by XRD, XPS, PL and Hall-effect measurement. The XPS analysis, especially about binding energies of Si 2p and C 1s peaks, reveals that in AlN crystals, C replaces N as an accepter and Si replaces Al as a donor. In PL spectroscopy, two main emission peaks are observed. Combined the structure and composition of AlN and related theoretical results, the two peaks are attributed to the complexes of VN-CN and CN-SiAl, respectively.