报道了国内首块用于极紫外投影光刻系统的6 inch(1 inch=2.54 cm)标准极紫外光刻掩模。论述了32 nm节点6 inch标准极紫外光刻掩模的设计方案，及掩模衬底、反射层、吸收层材料的工艺特性研究，对缺陷控制及提高掩模效率的方法进行了分析。运用时域有限差分法对掩模的光学特性进行了仿真，根据仿真结果确定合适的Cr吸收层厚度。运用电子束光刻技术进行了掩模的图形生成，针对其中的电子束光刻临近效应进行了蒙特卡罗理论分析，用高密度等离子体刻蚀进行了图形转移，所制造的掩模图形特征尺寸小于100 nm，特征尺寸控制精度优于20 nm，满足技术设计要求。

The first domestic 6 inch (1 inch=2.54 cm) extreme ultraviolet lithography (EUVL) mask for EUVL system is reported. The design of the 6 inch EUVL mask at 32 nm node is described, process characteristics of substrate materials, buffer and absorber layers are investigated in detail, and mask with low defective rate and high efficiency is designed. Suitable Cr absorber layer thickness is decided according to the optical property simulation by finite-difference time-domain (FDTD) method. Electron beam proximity effect is analyzed by using Monte Carlo simulation method. Electron beam lithography is used to generate patterns, and high density plasma etching is used to translate patterns to the Cr absorber layer and SiO2 buffer layer. EUVL mask with critical dimension below 100 nm and critical dimension accuracy less than 20 nm is obtained, which meets the requirements of technical design specifications.