提出了一种对于太阳电池光照条件和暗特性条件下对其伏安特性全段进行拟合提取参数的改进方法.对太阳电池J-V曲线进行分段, 提取每段的4个关键参数: 串联电阻(Rs)、并联电阻(Rsh)、品质因子(n)、反向饱和电流密度(J0).这种方法采用了双结电路模型法, 并以CdS/CdTe薄膜电池为例进行了光照下和暗特性分析, 得到了比单结电流模型更多的参数, 并且具有较高的拟合精度(误差<0.7%).

A revised method to evaluate parameters of solar cell from current-voltage characteristics, under illuminated or non-illuminated conditions, was described. The series resistance(Rs), the shunt resistance(Rsh), the ideality factor(n), and the reverse saturation current density(J0) were extracted using the two diode circuit model from selected regions of the J-V curves. Using the presented model, more parameters with higher fitted precision have been extracted from experimental J-V curves of a CdS/CdTe thin film solar cell than using a single diode circuit one.