发光学报, 2013, 34 (10): 1367, 网络出版: 2013-10-24
三明治结构电子阻挡层中势阱深度对LED性能的影响
Effect of Well Depth of Sandwich Electron-blocking Layer on The Performance of Blue Light-emitting Diodes
摘要
在LED中引入了Al0.1Ga0.9N-AlxGa1-xN-Al0.1Ga0.9N多层电子阻挡层, 并讨论结构中插入的势阱深度(即中间层AlxGa1-xN的Al组分“x”)的变化对LED性能带来的影响。研究发现, 具有三明治结构电子阻挡层(EBL)的LED比传统LED具有更好的发光特性, 并且其性能与电子阻挡层中的势阱深度密切相关。究其原因, 一是由于电子阻挡层内部不同程度的晶格失配而引入的极化电场引起了电子阻挡层的有效势垒高度的不同; 二是在于电子阻挡层中的势阱所产生的空穴聚集效应也会随着势阱深度的变化而变化。故而使得空穴注入效率和电子阻挡层对电子的限制作用在不同势阱深度的LED样品中有所不同。
Abstract
Blue light-emitting diodes (LEDs) with the Al0.1Ga0.9N-AlxGa1-xN-Al0.1Ga0.9N sandwich electron blocking layers (EBLs) are investigated numerically. The simulation results show that the LEDs with the sandwich EBLs exhibit better performance, which is closely related to the depth of the inserted well (denoted as x of AlxGa1-xN). The performance differences are attributed to the different levels of the electron confinement and hole injection efficiency, which is due to the different degree of the energy band modulation and hole gathering effect in the sandwich EBLs.
章敏杰, 梅霆, 王乃印, 朱凝, 王达飞, 李浩, 文洁. 三明治结构电子阻挡层中势阱深度对LED性能的影响[J]. 发光学报, 2013, 34(10): 1367. ZHANG Min-jie, MEI Ting, WANG Nai-yin, ZHU Ning, WANG Da-fei, LI Hao, WEN Jie. Effect of Well Depth of Sandwich Electron-blocking Layer on The Performance of Blue Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2013, 34(10): 1367.
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