Chinese Optics Letters, 2013, 11 (11): 112501, Published Online: Oct. 24, 2013
Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs Download: 667次
250.4390 Nonlinear optics, integrated optics 250.0040 Detectors 190.4400 Nonlinear optics, materials 190.4350 Nonlinear optics at surfaces
Abstract
The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.
Xiuhuan Liu, Yi Li, Zhanguo Chen, Mingli Li, Gang Jia, Yanjun Gao, Lixin Hou, Shuang Feng, Xinlu Li, Qi Wang. Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs[J]. Chinese Optics Letters, 2013, 11(11): 112501.