半导体激光器随着输出功率的提高在各领域的应用日益广泛，但芯片温度升高引起的功率饱和问题仍然是目前研究的重点之一。利用ANSYS软件对工作波长为808nm的单芯片半导体激光器的芯片有源区温度与封装热沉尺寸的关系进行了稳态热分析，模拟得出不同热沉参数条件下封装激光器芯片有源区温度的变化曲线，并提出一种散热较好的结构方案。

With the improvement of the output power of semiconductor laser, its applications are increasingly spreaded, but the power saturation caused by temperature increment is the focus of current studies. In this paper, aiming at the 808nm single-chip semiconductor laser, the relation of the temperature of the active region with the dimension of the packaging heat sink in steady-state was analyzed by using ANSYS software. Variable curves of the temperature of packaging chip with different parameters of heat sink were obtained with simulations, and a better heat dissipation structure was put forward.