半导体光电, 2013, 34 (5): 775, 网络出版: 2013-11-01
CCD纵向溢出漏结构工艺仿真与实现
Simulation and Fabrication of Vertical Spillover Drain Structure of CCD
抗晕能力 纵向溢出漏 仿真 CCD charge-coupled device(CCD) anti-blooming capacity vertical overflow drain simulation
摘要
传统的电荷耦合器件(CCD)处于强光环境时，会产生光晕现象; 纵向溢出漏结构的出现，满足了CCD在强光环境下的使用要求。通过对CCD的纵向溢出漏结构及其电势进行分析，发现抗晕势垒是纵向溢出漏结构能否实现抗晕功能的关键，决定了抗晕能力的强弱，而抗晕势垒受p阱注入剂量、埋沟注入剂量的影响。通过工艺仿真，确定了纵向溢出漏结构的p阱、埋沟工艺条件，根据仿真结果制造的纵向抗晕CCD抗晕能力大于100倍。
Abstract
Blooming occurs when conventional CCD operates under high-light imaging situations, but it can be significantly reduced by vertical overflow drain (VOD) structure. In this paper, analysis on the VOD structure and its potential indicate that anti-blooming barrier is the main factor for the VOD structure to realize anti-blooming function and the height of anti-blooming barrier is determined by implant dose of p-well and buried channel charge-coupled device (BCCD). And the process conditions are determined by simulations, and the anti-blooming capacity of the VOD CCD fabricated based on the simulation results exceeds 100 times.
雷仁方, 王晓强, 杨洪, 吕玉冰, 郑渝, 李利民. CCD纵向溢出漏结构工艺仿真与实现[J]. 半导体光电, 2013, 34(5): 775. LEI Renfang, WANG Xiaoqiang, YANG Hong, LV Yubing, ZHENG Yu, LI Limin. Simulation and Fabrication of Vertical Spillover Drain Structure of CCD[J]. Semiconductor Optoelectronics, 2013, 34(5): 775.
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