采用直流磁控溅射的方法在普通玻璃上制备了低价的氧化钒薄膜，在氧气和氩气混合气氛中，对所制备的薄膜进行不同时间的热处理，得到具有相变特性的VO2薄膜。分别利用X射线衍射(XRD)和场发射扫描电镜(SEM)分析了薄膜的组分、结晶结构和表面形貌，利用四探针法测试了薄膜的电阻。结果表明: 热处理前的氧化钒薄膜主要成分为V2O3，经过热氧化处理后，低价的氧化钒被氧化，薄膜中VO2含量增加，薄膜发生金属-半导体相变，其中450℃、2h为最佳处理参数，其电阻相变幅度超过2个数量级，薄膜的相变温度仅为30℃。

Vanadium oxide films were deposited by DC magnetron sputtering method on ordinary glass. Then the films were processed at 450℃ in the mixed atmosphere of oxygen and argon for different time to obtain phase transition VO2 films. X-ray diffraction (XRD) and scanning electron microscope (SEM) were employed to analyze the phase composition, structure of crystalline units of the films and surface morphology. And also the resistance of the films was measured by four-probe method. The results show that: parts of the V2O3 change to VO2 in the vanadium oxide films after heat treatment. With the increasing VO2, the semiconductor-metal phase transition occurres. And the variation amplitude is more than two magnitudes while the phase transition temperature of the films is about 30℃ when the parameters are set as 450℃, 2h.