发光学报, 2013, 34 (11): 1483, 网络出版: 2013-11-19
分子束外延生长的极性与非极性BeZnO薄膜的比较研究
Comparative Study of Polar and Non-polar BeZnO Films Grown by Plasma-assisted Molecular Beam Epitaxy
蓝宝石 晶体取向 分子束外延 光致发光 BeZnO BeZnO sapphire crystal orientation molecular beam epitaxy photoluminescence
摘要
采用分子束外延设备在不同晶面蓝宝石衬底上(c面, a面, r面)生长BeZnO薄膜。使用复合缓冲层生长得到了高质量的BeZnO薄膜, X射线衍射半高宽达到600 arcsec。在c面与a面蓝宝石衬底上生长得到了极性BeZnO薄膜, 在r面蓝宝石上生长得到了非极性BeZnO薄膜。共振拉曼光谱测试结果表明薄膜中的Be含量在同一水平。相对于c面与a面蓝宝石上的极性BeZnO薄膜, 生长在r面蓝宝石衬底上的非极性BeZnO薄膜具有较大的表面粗糙度以及较大的半高宽, 但是其光致发光谱中的紫外发光峰远远强于极性BeZnO薄膜, 并且黄绿光发光峰弱于极性BeZnO薄膜。
Abstract
BeZnO films were grown on different crystallographic planes (c-, a- and r-planes) of sapphire substrates using plasma-assisted molecular beam epitaxy (P-MBE). High quality BeZnO films were achieved using a multi-layer buffer design with full widths at half maximum (FWHMs) of rocking curves up to 600 arcsec. Polar BeZnO films were obtained on the a- and c-plane sapphire substrates, while the nonpolar ones were obtained on the r-plane sapphire substrate. The Raman spectroscopy confirmed the Be dopants in the ZnO were at the same level in three samples. The BeZnO sample grown on the r-sapphire substrate were found to have largest grains and higher FWHM, while the ones grown on a- and c-sapphire subatrates had the similar fine grains and lower FWHM. However, the photoluminescence (PL) spectra indicated the non-polar BeZnO sample had significantly stronger ultraviolet emission and weaker green emission than polar samples.
王玉超, 吴天准, 陈明明, 苏龙兴, 张权林, 汤子康. 分子束外延生长的极性与非极性BeZnO薄膜的比较研究[J]. 发光学报, 2013, 34(11): 1483. WANG Yu-chao, WU Tian-zhun, CHEN Ming-ming, SU Long-xing, ZHANG Quan-lin, TANG Zi-kang. Comparative Study of Polar and Non-polar BeZnO Films Grown by Plasma-assisted Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2013, 34(11): 1483.