制备了结构为 ITO/NPB(30 nm)/Rubrene(0.2 nm)/CBP∶Bczvbi (8 nm,x%)/Bphen (30 nm)/Cs2CO3∶Ag2O(2 nm,20%)/Al(100 nm)的器件。研究了Bczvbi掺杂浓度(x=5,10,15)对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性，得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时，器件的效率和亮度都为最大。驱动电压为7 V时，最大电流效率为4.61 cd/A；驱动电压为9 V时，最大亮度为21 240 cd/m2。当驱动电压从4 V增加到9 V时，色坐标从(0.36，0.38)变化为(0.27,0.29)，均处于白光区域。

The OLED devices were fabricated with the structure of ITO/NPB (30 nm)/Rubrene (0.2 nm)/CBP∶Bczvbi (8 nm, x%)/Bphen (30 nm)/Cs2CO3∶Ag2O (2 nm, 20%)/Al (100 nm). The effect of different CBP∶Bczvbi doping concentration (x=5, 10, 15) on the properties of white light device was studied. High luminance and efficiency white organic light-emitting diodes (OLEDs) were obtained comprehensively utilizing the energy transfer between the host and the guset in the luminous layer and the hole-blocking characteristics. The device had the maximum efficiency and luminance when the mass fraction of Bczvbi was 10%. This device had a maximum current efficiency of 4.61 cd/A at 7 V and maximum luminance of 21 240 cd/m2 at 9 V. The CIE coordinates of the device were well within the white region when the voltage changed from 4 V to 9 V.