利用电感电容(LC)低通滤波电路及InGaAs/InP雪崩二极管(APD)研制了200 MHz工作频率的近红外高速单光子探测器，LC低通滤波器采用简单的7阶椭圆函数滤波电路设计，探测器驱动采用脉冲门控电路及880 MHz、175 MHz低通滤波电路。在-40 ℃工作条件下，探测器探测效率、暗计数率、后脉冲概率典型值分别为11.8%、2.22×10-6/gate、1.89%。探测效率为10%时，随工作温度升高，探测器暗计数率增大，后脉冲概率则减小。在保证工作温度及门控幅值不变的条件下，随着APD反向直流偏压的升高，探测效率逐渐增大并趋于一个定值，而暗计数率及后脉冲概率则持续增大。采用相同的滤波器组合及正弦门控也可获得性能良好的1 GHz单光子探测器，在-40 ℃工作条件下，探测器探测效率、暗计数率、后脉冲概率典型值分别为11%、1.9×10-6/gate、1.48%。

A simple LC low pass filter (LPF) circuit and InGaAs/InP avalanche photodiodes (APD) are used to fabricate 200 MHz high speed single-photon-avalanche-detector (SPAD), working in the near infrared ray (NIR) band. The SPAD is driven by pulse gate signals, and the group of 880 MHz and 175 MHz LPFs based on 7th order elliptic filter are used to suppress the capacitive response of the avalanche diode. At the work condition of -40 ℃, the SPAD detection efficiency, dark count probability and after-pulse probability are 11.8%, 2.22×10-6/gate and 1.89%, respectively. Under the condition of detection efficiency of 10%, the dark count probability increases as the working temperature increases, while the after-pulse probability decreases. When the reverse direct current bias increases, under the condition of the temperature and gate amplitude unchanged, the detection efficiency can increase and reach a stable value, while the dark count probability and after-pulse probability increase persistently. Moreover, a 1 GHz sine gating SPAD achieves high performance using the same group of LPFs. At the work condition of -40 ℃, the 1 GHz SPAD detection efficiency, dark count probability and after-pulse probability are 11%, 1.9×10-6/gate and 1.48%, respectively.