采用溶胶-凝胶法制备了Tb3+掺杂的ZnO-3SiO2发光材料, 通过DTA-TG、IR、XRD、SEM、激发和发射光谱图对其结构和发光性能进行了分析。DTA-TG测试表明, 20~400 ℃出现明显失重现象, 说明在此过程中凝胶中的吸附水、乙醇等物质发生了脱附释放; XRD测试证明, 材料属于非晶态; SEM显示形成了表面光滑的四面体和多面体颗粒; IR光谱显示, 样品制备过程中Si—O—Si桥氧键和非桥氧键的转变对材料的发光有较大影响。激发和发射光谱图显示, 材料制备的最佳退火温度为600 ℃, Tb3+在ZnO-3SiO2基质中的掺杂量为2.75%(摩尔分数)时发光最好。在544 nm监测波长下, 测得的最佳激发波长为紫外光377 nm, 即在377 nm光激发下, 材料发射的绿光单色性好。

Tb3+ doped ZnO-3SiO2 luminescent materials was prepared by the Sol-Gel method. The crystal structure and the luminescent properties of the samples are measured and characterized by using the method of DTA-TG, IR, XRD, SEM and excitation and emission spectra, respectively. The DTA-TG analysis shows that the weight loss is obvious in the tempe-rature range of 20~400 ℃, and this phenomenon corresponds to the loss of dissociated water and ethanol. The IR spectra show that the change between the bridge oxygen bonds and the non bridge oxygen bonds during the sample preparation has a large influence on the luminous efficiency. Powder XRD analysis indicates that the samples belong to the non-crystal materials. SEM of samples show that it forms grain structure of tetrahedron and polyhedron. The excitation and emission spectra show that the best annealing temperature is 600 ℃ for preparing material and the optimum doping amount of Tb3+ is 2.75%(at%).It also shows that the best excitation light is the ultraviolet light with the wavelength of 377 nm when the wavelength of the monitoring light is 544 nm, that is to say, the monochromaticity and the luminescent intensity of green lights excited from the samples are optimum when the wavelength of the excitation light is 377 nm.