对低速沉积的栅极绝缘层和低速沉积的有源层的薄膜沉积条件进行了优化, 设定4个实验条件, 考察了不同条件下膜层的均匀性, TFT产品的开路电流(Ion)的整体分布规律以及均匀性, Ion的提升比例以及产品的阈值电压, 确定条件二为最优条件。对比优化前后产品的栅极偏应力下TFT的转移曲线和高频信号下电容-电压曲线, 进一步分析了产品的电学稳定性。研究发现Ion提升了42%, 开关比(Ion/Ioff)提升了约70%, 优化后的TFT的稳定性优于优化之前, 达到了改善TFT特性的目的。

The deposition conditions were optimized for low speed deposition gate insulating layer (GL) and low speed deposition active layer(AL), and four experimental conditions were established. The second condition was confirmed to be the optimization condition by analyzing the uniformity of the thickness, the overall distribution patterns and uniformity of Ion. The improvements of Ion and threshold voltage were investigated. To further investigate the stability of electrical characteristics, the TFT transfer curves under gate stress and the C-V curves under high-frequency signal were analyzed before and after optimization. It was found that the stability of optimized electrical characteristics for TFT was better. Ion was improved by 42% and the switching ratio (Ion/Ioff) was improved by 70%.