光散射学报, 2008, 20 (2): 182, 网络出版: 2014-01-21
InGaAs/GaAs单量子阱PL谱的温度变化特性
Temperature Dependence of PL Spectra of InGaAs/GaAs Single Quantum Well Properties
摘要
采用分子束外延方法制备了InGaAs/GaAs单量子阱, 利用自组装的光致荧光探测系统, 对其进行了光致荧光谱研究。考察了不同温度下荧光峰波长、峰形的影响。研究结果表明: 高温时荧光主要是源于带—带间载流子跃迁, 而在低温时则来源于束缚在量子阱中激子的跃迁。
Abstract
InGaAs/GaAs single-quantum wells (SQW) were prepared using molecular beam epitaxy technique. Photoluminescence (PL) spectra of InGaAs/GaAs single-quantum wells were measured under different temperature. The temperature dependence of peak and shape was analyzed. The recombination at high temperature is attributed to band-to-band carrier transition. However, at low temperature, excitonic recombination is prevailing.
范伟, 徐晓轩, 孙秀峰. InGaAs/GaAs单量子阱PL谱的温度变化特性[J]. 光散射学报, 2008, 20(2): 182. FAN Wei, XU Xiao-xuan, SUN Xiu-feng. Temperature Dependence of PL Spectra of InGaAs/GaAs Single Quantum Well Properties[J]. The Journal of Light Scattering, 2008, 20(2): 182.
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