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1.31 μm InGaAsP/InGaAlAs TM偏振高速激光器的优化设计

Design Optimization of 1.31 μm InGaAsP/InGaAlAs TM Mode High Speed Lasers

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摘要

报道了一种以InGaAsP(阱)/InGaAlAs(垒) 量子阱为有源区的[1.31 μm]TM偏振高速激光器。以1% 张应变的 In0.49Ga0.51As0.79P0.21作为阱层,0.5%压应变的InGaAlAs作为垒层,计算了由不同势垒带隙(1.309、1.232、1.177、1.136、1.040 eV)构成的五种多量子阱的发光特性,和由其构成的激光器的器件特性。数值模拟分析表明,采用适度小的势垒带隙,既能将载流子有效限制在有源区,又可以得到载流子在量子阱间的均匀分布,从而改善量子阱的发光特性和激光器的性能参数。该仿真对研制低阈值电流、高特征温度和大调制带宽的InGaAsP/InGaAlAs应变补偿量子阱激光器具有指导意义。

Abstract

A novel design scheme for high speed [1.31 μm]TM mode lasers based on InGaAsP (well)/InGaAlAs (barrier) strain-compensated multiple quantum wells (MQWs) is proposed. Calculation on luminescence property with five different MQWs (10 nm, 1% tensile-strained In0.49Ga0.51As0.79P0.21 well with 12 nm, 0.5% compress-strained InGaAlAs barriers of Eg =1.309, 1.232, 1.177, 1.136, 1.040 eV, respectively) and simulation on laser diodes based on these MQWs are presented. The results of these studies indicate that moderately small barrier height can not only provide effective confinement for charge carriers, but also make carrier distribution in the MQWs more uniform, thus acquiring advantageous luminescence property and device performance. Our investigation gives guidance to the design and fabrication of [1.31 μm] TM mode lasers of low threshold current, high characteristic temperature, and wide modulation bandwidth.

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中图分类号:O472+.3;O472+.4

DOI:10.3788/lop51.021401

所属栏目:激光器与激光光学

责任编辑:殷建芳

收稿日期:2013-10-21

修改稿日期:2013-10-25

网络出版日期:2014-01-20

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曾徐路:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123中国科学院大学, 北京 100049
于淑珍:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
李奎龙:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
孙玉润:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
赵勇明:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
赵春雨:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
董建荣:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123

联系人作者:曾徐路(xlzeng2012@sinano.ac.cn)

备注:曾徐路(1990—),男,硕士研究生,主要从事MOCVD 生长InP 和GaAs 基激光器的研究。

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引用该论文

Zeng Xulu,Yu Shuzhen,Li Kuilong,Sun Yurun,Zhao Yongming,Zhao Chunyu,Dong Jianrong. Design Optimization of 1.31 μm InGaAsP/InGaAlAs TM Mode High Speed Lasers[J]. Laser & Optoelectronics Progress, 2014, 51(2): 021401

曾徐路,于淑珍,李奎龙,孙玉润,赵勇明,赵春雨,董建荣. 1.31 μm InGaAsP/InGaAlAs TM偏振高速激光器的优化设计[J]. 激光与光电子学进展, 2014, 51(2): 021401

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