研究了不同气氛下（空气、氧气和氮气）248 nm准分子激光辐照对ZnO薄膜光致发光谱和电学性质的影响；采用高斯线形对不同气氛下激光辐照ZnO薄膜的光致发光谱进行了拟合，并对位于3.31、3.28、3.247、3.1 eV附近的发光峰进行了归属指认和机理分析。激光辐照ZnO薄膜导致紫外光致发光峰强度明显下降并伴有少量红移，并且使得位于3.274 eV的一级声子伴线(D0X-1LO)发射峰和位于3.203 eV的二级声子伴线(D0X-2LO)发射峰合并形成一个峰。富氧条件下激光辐照ZnO薄膜会造成受主浓度增加，施主浓度减少；而缺氧条件下激光辐照ZnO薄膜会造成受主浓度减少，施主浓度增加。激光辐照后ZnO薄膜的载流子浓度上升了2个数量级，载流子迁移率上升了1个数量级，电阻率下降了3个数量级。

The effect of 248 nm excimer laser irradiation on the photoluminescence and electrical properties of ZnO thin films under different atmospheres (air, oxygen and nitrogen) is investigated. Based on Gaussian curve, the photoluminescence spectra of ZnO thin films irradiated by laser under different atmospheres are fitted, and the photoluminescence peaks around 3.31, 3.28, 3.247, 3.1 eV are assigned and analyzed in mechanism. After laser irradiation, ultraviolet (UV) emission is obviously lower and shows a little red-shift, while D0X-1LO and D0X-2LO transitions merges into one peak. After laser irradiation under oxygen rich atmosphere, the acceptor density of ZnO thin films increases, and the donor density decreases. After laser irradiation under oxygen deficiency atmosphere, the acceptor density of ZnO thin films decreases, and the donor density increases. After laser irradiation, the resistivity of ZnO thin films is decreased by three orders of magnitude, carrier concentration is increased by two orders of magnitude, and carrier mobility is increased by one orders of magnitude.