以p型硅和苝四甲酸二酐 (perylene-3,4,9,10-tetracarboxylic acid dianhydride,PTCDA)为异质结，梳状金(Au)薄膜作为顶电极和光入射窗口制备了光敏二极管。研究表明，PTCDA的厚度和Au电极的厚度对光敏二极管的光响应度有很大的影响。对比不同PTCDA厚度的器件性能，在PTCDA厚度为100 nm时，光响应度最高达到0.3 A/W。进而采用最优化的100 nm厚的PTCDA薄膜制备硅基光敏二极管，对比不同Au电极厚度的器件性能。在Au厚度为20 nm时，器件的光响应度达到最优化的0.5 A/W。

A photodetector was prepared by a heterojunction of p-type silicon and (perylene-3,4,9,10-tetracarboxylic acid dianhydride) PTCDA，with comb-shape Au thin film acting as electrode and light-incident window. The experiment results show that the thickness of PTCDA and Au film have a great influence on the photoresponsivity and the external quantum efficiency of the photosensitive diode. The light responsivity can reach the maximum value of 0.3 A/W when PTCDA thickness is 100 nm. Then, the devices with the optimized 100 nm PTCDA and different thickness of Au electrode were fabricated. The optimal light responsivity can reach 0.5 A/W with 20 nm Au thickness.