原子自发辐射效率的提高对单光子源等光电子设备的研究和制造具有重要的意义.本文推导了自发辐射率和局域态密度的格林函数表示形式,通过频域有限差分法求解格林函数,得到自发辐射率的数值特性.分析了在不同金属材料、结构以及辐射波长下的自发辐射率，探讨了其内在的物理机理，结果表明：特定波长下介质的表面等离激元效应会增强自发辐射，不同材料和结构对辐射效率的提高有不同的影响.该研究结果可为新型纳米器件及光电子设备的制造以及优化提供重要的参考.

The improvement of the efficiency of spontaneous emission will give great help to the research and manufacture of optoelectronic devices such as single photon resource. The local density of elestromagnetic states was calculated which is represented by the electric dyadic Green′s function through the finite-difference frequency-domain method, the local density of states and the spontaneous emission rate in different metal materials, structures and wavelengths were analyzed, and the intrinsic physical mechanism was explored. The results show that the spontaneous emission rate of atoms can be greatly enhanced when surface plasmon polariton couple to the emiter, and different structure and the refractive indices of materials have different improvement of spontaneous emission rate. This research can provide important reference for the manufacture and optimization of optoelectronic devices.