实验采用真空热蒸镀方法，在高准确度膜厚控制仪的监控下，制备了结构为ITO/2T-NATA(25 nm)/NPB(30 nm)/BePP2(X nm)/Alq3(30 nm)/LiF(0.6 nm)/Al(80 nm)的蓝光器件，并对其发光层（BePP2）薄膜的沉积速率以及厚度对器件的亮度、发光效率影响进行了分析和实验研究.结果表明：当束源炉孔径为Φ1.5 mm，束源炉温度在120℃～150℃区域，BePP2的蒸镀速率比较平滑，斜率变化小，易于膜厚精准控制，且薄膜较致密满足器件需要；BePP2在最佳沉积速率为0.02 nm/s（蒸发温度为135℃），且发光层厚度为35 nm时，可获得启亮电压为5.34 V、发光亮度为9 100 cd/m2、发光效率达4.4 cd/A的较理想蓝光器件.

Experiments using the vacuum thermal evaporation methods, under the monitoring of highly accurate film thickness controller, prepared the ITO/2T-NATA(25 nm)/NPB(30 nm)/BePP2(X nm)/Alq3(30 nm)/LiF(0.6 nm)/Al(80 nm)blue organic light-emitting diode structure, analyzed and experimental researched the organic light emitting layer of BePP2 deposition rate and thickness of the organic light emitting diode luminance and luminous efficiency. Experiments show that:When beam source furnace aperture is Φ1.5 mm, beam source furnace temperature is 120℃~150℃, BePP2 evaporation rate is smooth, the slope change is small, easy to film thickness precision control, and the film are denser to meet the needs of the device; when light-emitting layer BePP2 best deposition rate is 0.02 nm/s (evaporation temperature is 135 ℃) , and the thickness of BePP2 is 35 nm, get lights on voltage of 5.34 V, luminescence brightness of 9 100 cd/m2, 4.4 cd/A luminous efficiency of the ideal blue device can be obtained.