针对 n-on-p型长波 Hg1-xCdxTe红外探测器的暗电流进行建模分析，分析了不同机制对暗电流的影响，仿真分析结果和实际结果能够较好地匹配。得出探测器的工作状态暗电流 Idark＝9×10-10 A，工作电阻 Rr＝109.，品质因子 R0A＝20.cm2。从仿真分析结果得出，在现有工艺下， Shockley-Read-Hall(SRH)复合和表面漏电是影响暗电流的最主要的非本征因素，其中 SRH复合速率为 2×1016 /s.cm3，当表面态到达 1×1012 cm-2，器件会出现严重的表面沟道。

The dark current of n-on-p type LWIR based on Hg1-xCdxTe has been simulated in this paper. Different mechanisms influences dark current are also analyzed. The results of the simulation match well with the experiments. The photodetector has a dark current Idark＝9×1010 A，working resistance Rr＝109.， and quality factors R0A＝20.cm2. According to the results，with the present technique，Shockley-Read-Hall (SRH) recombination and surface leakage current are the most influential extrinsic factors to the dark current. The recombination rate of SRH can be as high as 2×1016 /s.cm3. And the device will have a severe surface channel when the surface states reaches 1×1012 cm-2.