量子电子学报, 2014, 31 (1): 1, 网络出版: 2014-02-26   

应用于极紫外光刻系统多层膜的研究进展

Recent advances in multilayer coatings for extreme ultraviolet lithography
作者单位
中国科学院安徽光学精密机械研究所, 安徽省光子器件与材料重点实验室, 安徽 合肥 230031
摘要
极紫外光刻是采用波长为13.5 nm的极紫外光作为光源,实现半导体集成电路工艺22 nm以及更 窄线宽节点的主要候选光刻技术。性能优越稳定的多层膜技术是构建整个极紫外光刻系统的重要技术之一。 从高反射率、波长匹配、控制面形以及稳定性和寿命方面总结了极紫外光刻系统中多层膜的性能要求和 最新的研究进展,叙述了制备高性能多层膜的方法和沉积设备,讨论了多层膜制备技术存在的问题和发展的方向。
Abstract
Extreme ultraviolet lithography (EUVL) has become the key candidate of lithography tools to manufacture devices at the 22 nm node and beyond of semiconductor integrated circuit, which makes use of the extreme ultraviolet rays with 13.5 nm wavelength as the light source. It is one of approaches to construct a normal incidence optical system by using the excellent performance multilayer coatings. A review was given of the specification of the coatings for EUVL and the recent progress in multilayered systems. The key deposition methods and equipments that produce such coatings were discussed. Furthermore, in terms of high reflectance, wavelength matching, profile matching, life and stability, it also concludes the problems existed in the preparation technologies of the multilayered systems and the future development direction.

秦娟娟, 董伟伟, 周曙, 游利兵, 方晓东. 应用于极紫外光刻系统多层膜的研究进展[J]. 量子电子学报, 2014, 31(1): 1. QIN Juan-juan, DONG Wei-wei, ZHOU Shu, YOU Li-bing, FANG Xiao-dong. Recent advances in multilayer coatings for extreme ultraviolet lithography[J]. Chinese Journal of Quantum Electronics, 2014, 31(1): 1.

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