量子电子学报, 2014, 31 (1): 107, 网络出版: 2014-02-26
单量子阱InGaN/GaN势垒高度与LED光电性能关系研究
Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance
光电子学 量子阱垒高 In含量 数值模拟 InGaN/GaN发光二极管 optoelectronics quantum well barrier height In concentration numerical simulation InGaN/ GaN light emitting diodes
摘要
通过对Inx Ga1-x N掺杂不同组份的In来改变Inx Ga1-x N的禁带宽度,从 而改变量子阱势垒高度,并研究其与发光二极管光电性能、效率下降之间的关系。通过仿真模拟实验研究了不同量子阱势垒高度 与InGaN/GaN量子阱发光二极管的功率光谱密度、内量子效率、发光功率及复合率之间的关系。分析结果表明: 1) In含量与 发光二极管的光电性能并非成线性关系。2) 在电流密度较低时, In组份越小,光谱密度峰值越大,发光功率越大。3) 在电流 密度较大时, In组份越大,光谱密度峰值越大,发光功率越大。4) 光谱蓝移与电流密度大小紧密相关, 电流密度大的蓝移程度大,反之越小。因此,应根据不同的电流密 度来选择In组份的大小,从而提高发光效率。
Abstract
Band gap of the Inx Ga1-x N was changed by doping with different concentrations of In content for changing the quantum well barrier height. The relationship between the type of barrier height and the power spectral density, internal quantum efficiency, light emitting power and recombination rate of the InGaN/GaN quantum well light-emitting diode was researched. The analysis results showed as follows: 1) In content of the light-emitting diode and optical properties is not a linear relationship. 2) When the current density is low, the smaller the In content, the greater the peak of the spectral density and power of the light emitting. 3) However, when the current density is larger, the greater the In content, the greater the peak of the spectral density and power of the light emitting. 4) The blue-shift associates with the size of the current density, when current density is large, blue-shift is big, the smaller the contrary. Therefore, the content of In should be selected according to the type of current density so as to improve the luminous efficiency.
张大庆, 李国斌, 陈长水. 单量子阱InGaN/GaN势垒高度与LED光电性能关系研究[J]. 量子电子学报, 2014, 31(1): 107. ZHANG Da-qing, LI Guo-bin, CHEN Chang-shui. Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance[J]. Chinese Journal of Quantum Electronics, 2014, 31(1): 107.