激光与光电子学进展, 2014, 51 (3): 030006, 网络出版: 2014-03-03
准零维量子点激光器的发展瓶颈 下载: 694次
Developing Bottlenecks of Quasi-Zero-Dimensional Quantum Dot Lasers
摘要
近年来半导体材料主要朝两个方向发展:一方面是材料工程,即通过不断探索扩展新的半导体材料实现;另一方面是能带工程,即通过改变已知材料的维度进而实现能带的调节。准零维半导体量子点就是通过改变其尺寸调控能带的典型代表。主要论述了准零维量子点激光器发展过程中遇到的一些瓶颈问题。
Abstract
In recent years, the developments of semiconductor materials follow two directions. One is socalled the material engineering, which is focusing on continuously pursuing new semiconductor material systems. The other one is the band engineering which is used to change the band energy of known semiconductor material system by adjusting their dimensions. Quasi-zero-dimensional semiconductor quantum dot is a typical representative of band engineering by changing the size of dot. In this paper, we are mainly concentrated on introducing the bottlenecks of quasi-zero-dimensional semiconductor quantum dot lasers.
李世国, 王新中, 周志文, 张卫丰. 准零维量子点激光器的发展瓶颈[J]. 激光与光电子学进展, 2014, 51(3): 030006. Li Shiguo, Wang Xinzhong, Zhou Zhiwen, Zhang Weifeng. Developing Bottlenecks of Quasi-Zero-Dimensional Quantum Dot Lasers[J]. Laser & Optoelectronics Progress, 2014, 51(3): 030006.