提出了一种基于腔面非注入区的新型窗口结构, 通过腐蚀高掺杂欧姆接触层, 在腔面附近引入电流非注入区, 限制载流子注入腔面, 减少载流子在腔面处的非辐射复合, 提高了激光器腔面的光学灾变性损伤(COD)阈值。同时, 引入脊型波导结构, 降低了光束的水平发散角。采用该结构制作的器件在功率达到22W时仍未出现COD现象, 而无腔面非注入区结构的器件输出功率达到18W时腔面发生COD。同时, 采用该结构制作的器件在工作电流为12A时其光束的水平发散角约为10°, 而常规电流非注入区结构的器件在相同的工作电流下其光束水平发散角约为15°。

A novel structure of non-injection regions near cavity facets was introduced. By etching the p＋-GaAs layer, non-injection regions are formed near the facets. In that case, no carriers are supplied to the facet regions by current injection which diminishes the carrier nonradiative recombination at the facets, and the power at which catastrophic optical damage (COD) occurs is effectively increased. Moreover, ridge waveguide is employed in non-injection regions, which narrows the horizontal far field divergence angle. The maximum output power of laser diodes with this novel structure is found to be 22W, while that of laser diodes without non-injection regions is 18W. When the injection current is 12A, the horizontal divergence angle of laser diodes with this novel structure is 10°, and that of laser diodes with normal non-injection regions is 15°.