用磁控溅射的方法在透明导电氧化物衬底上制备了CdS薄膜, 制备时的衬底温度为30~200℃.X射线衍射测试结果表明在这一条件下制备的CdS薄膜是六角纤锌矿的多晶结构.扫描电子显微镜结果显示薄膜具有较好的晶体质量, 这一结论也和拉曼光谱、紫外-可见吸收光谱、光致发光光谱的结果一致.拉曼光谱显示CdS薄膜内部的压应力随着制备温度的提高而增大.

Cadmium sulfide thin films were grown on transparent conductive oxide coated glass substrates by radio frequency magnetron sputtering with a substrate temperature ranging from 30℃ to 200℃. X-ray diffraction measurements reveal that cadmium sulfide films were polycrystalline with the hexagonal wurtzite structure. The scanning electron microscope images show a good crystalline quality of the films which can also be confirmed by the Raman spectra, ultraviolet-visible absorption spectra and the photoluminescence spectroscopy. The Raman spectra measurements indicate that the compressive stress in the CdS films increases with increasing growth temperature.