选择了四种典型双极集成电路，在两种不同剂量率下，开展了不同温度的高温辐照加速实验，测量了典型双极集成电路的辐射敏感参数在不同高温辐照下的变化规律。实验结果表明：高温辐照能够给出空间低剂量率辐射损伤增强效应的保守估计，且存在最佳辐照温度，最佳辐照温度随总剂量的增加向低温区漂移，随剂量率的增大向高温区漂移，在相同剂量率和总剂量下，输入级为NPN晶体管的双极集成电路比输入级为PNP晶体管的最佳辐照温度低。

Four types of bipolar integrated circuits were irradiated at different elevated temperature with two different dose rates, after that, the corresponding sensitive parameters were extracted and analyzed. The results prove that elevated temperature irradiation could provide a conservative estimation for the radiation damage at low dose rate when the optimum irradiation temperature is selected. The optimum irradiation temperature increases with the dose rate but decreases with the total dose. With the same total dose and dose rate, the optimum irradiation temperatures of bipolar integrated circuits with NPN input stage are lower than those with PNP input stage.