基于0.5 μm标准Biplor、互补金属氧化物半导体和双扩散金属氧化物工艺设计了两种不同结构不同尺寸的光电探测器，包括传统的P+/N-EPI/BN+结构光电探测器和多叉指P+/N-EPI/BN+结构的光电探测器.通过仿真优化设计了光电探测器的结构参量和性能，测试结果表明：多叉指状P+/N-EPI/BN+光电探测器能够改善650 nm的响应度以及降低结电容.选择该结构大面积P+/N-EPI/BN+光电探测器用于和跨阻放大器以及后端放大器的单片集成，采用0.5 μm标准Biplor、 互补金属氧化物半导体和双扩散金属氧化物工艺实现了一个用于650 nm塑料光纤通信的单片集成光接收芯片.该光接收芯片的测试结果表明：对650 nm的入射光，在160 Mb/s速率的伪随机二进制序列以及小于10－9的误码率条件下，光接收芯片的灵敏度为－15 dBm，并能得到清晰的眼图.因此，本文设计的光电探测器可以很好地应用于宽带接入网中的高速塑料光纤通信系统的光接收芯片中.

Two types of photodetectors including conventional P+/N-EPI/BN+ photodetector and multi-finger P+/N-EPI/BN+ photodetector were implemented in a standard 0.5 μm Biplor, CMOS and DMOS process with different sizes. The performance and parameter of photodetectors were simulated and optimized. Results of the characteristics of photodetectors simulations and tests were presented, which showed that the multi-finger structure P+/N-EPI/BN+ photodetector can improve the responsibility at 650 nm and decrease the junction capacitance. The large-area multi-finger structure P+/N-EPI/BN+ photodetector was chosen for the monolithic integration with a trans-impedance amplifier and a preamplifier. A proposed monolithic optoelectronic integrated receiver was fabricated in 0.5 μm Biplor, CMOS and DMOS technology for 650 nm plastic optical fiber communication. The measurements of the proposed receiver were done. The receiver achieved a sensitivity of -15 dBm with the bit-error-rate of 10－9 at 160 Mb/s pseudo random binary sequence signal for 650 nm input light. A clear eye diagram was demonstrated for 160 Mb/s pseudo random binary sequence signal. These indicate that the proposed photodetector can be employed in the receiver chip of high-speed plastic-optical-fiber-based fast ethernet system for broadband access network application.