光电子技术, 2014, 34 (1): 11, 网络出版: 2014-04-09  

溅射压强对Sc掺杂ZnO薄膜绒面结构的影响

Effect of Sputtering Pressure on the Textured Structure of Sc Doped ZnO Thin Films
作者单位
1 上海大学 理学院物理系, 上海, 200444
2 中科院 上海微系统与信息技术研究所新能源技术中心, 上海, 201800
摘要
采用射频磁控溅射方法, 分别在0.5 Pa, 1.0 Pa, 1.5 Pa以及2.0 Pa的溅射压强下制备出了Sc:ZnO(SZO)薄膜, 并用X射线衍射仪、扫描电子显微镜、紫外可见光分光光度计等设备对样品的晶体结构、表面形貌及光学性质进行了表征。结果表明, 当溅射压强为1.5 Pa时, SZO薄膜沿平行于衬底的(100)方向择优生长, 形成了织构化的表面形貌, 陷光效果增强, 可见光透过率达到87%, 同时其光散射能力也有了显著提高。
Abstract
Scandium-doped ZnO (SZO) thin films have been prepared by radio frequency magnetron sputtering with the sputtering pressure varied from 0.5pa to 2.0pa.And the crystal structure, surface morphology, optical properties of these films are investigated by X-ray diffraction, SEM, UV-VIS spectrophotometer and so on. It is found that the preferred orientation of the films turn to (100) at 1.5 pa, which is parallel to the substrate, and the textured structure appears. It is conductive to light trapping so that the films obtain the highest transmittance of 87% in the visible range, and the light scattering capacity is also improved.

宋晨辰, 赵占霞, 马忠权, 赵磊, 孟凡英. 溅射压强对Sc掺杂ZnO薄膜绒面结构的影响[J]. 光电子技术, 2014, 34(1): 11. SONG Chenchen, ZHAO Zhanxia, MA Zhongquan, ZHAO Lei, MENG Fanying. Effect of Sputtering Pressure on the Textured Structure of Sc Doped ZnO Thin Films[J]. Optoelectronic Technology, 2014, 34(1): 11.

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