利用改进的遗传算法从GaMnAs外延薄膜的远红外反射光谱中提取了GaMnAs薄膜的洛伦兹振子模型参数, 发现GaAs掺入Mn后, ωTO向低频方向移动, ωLO基本保持不变, ε∞和εs均减小, γ有很大变化。并通过XRD以及近红外谱发现Mn的掺入会引入缺陷, 这种缺陷会影响晶格质量, 导致γ发生很大变化。

The revised genetic algorithm was successfully used to extract the Lorentz oscillator model parameters of GaMnAs from far-infrared reflectance spectra. Comparing the Lorentz oscillator model parameters of GaMnAs with those of GaAs, it was found that ωTO moved to lower frequencies, ε∞ and εs decreased, γ changed greatly, but the ωLo was almost not changed. Analysis on XRD and near-infrared spectrum of GaMnAs shows that introduced defects by Mn incorporation affects the quality of lattice and leads γ changed dramatically.