采用分子束外延(MBE)技术生长InGaAsSb多量子阱结构, 利用光致发光光谱对材料的生长特性进行了研究。研究了衬底温度对材料激发光谱强度的影响, 探索了发光波长与有源层量子阱厚度的关系。发现外延生长时衬底温度对材料的质量有重要影响; 在一定范围内, 量子阱厚度不断增加会导致材料的光致发光波长增加。

The growth and chracterization of InGaAsSb quantum well structrure were conducted by moleculer beam epitaxy (MBE) and photoluminescence (PL). We studied the issues on the relation between the quality of InGaAsSb quantum well material and substrate temperature, well thickness. It is found that the material quality depends on the substrate temperature, and PL wavelength of material increases with the increasement of InGaAsSb quantum well thickness.