通过利用低压金属有机物化学气相沉积技术，在不同偏向角的GaAs衬底上生长了GaAsP/GaInP量子阱外延层结构。通过对样品室温光致发光测试结果的分析，讨论了势垒层生长温度、势阱层Ⅴ/Ⅲ比以及衬底偏向角对外延片发光波长、发光强度及半峰全宽的影响。发现在相同生长条件下，势垒层低温生长的量子阱发光更强；降低势阱层Ⅴ/Ⅲ比可以增加样品的发光强度，同时发光的峰值波长会出现红移。相同生长条件下，样品的发光强度会随其衬底偏向角的增加而增强，半峰全宽随其衬底偏向角的增大而减小。

GaAsP/GaInP quantum wells are grown on different misoriented substrates by low pressure_metal-organic chemical vapor deposition (LP_MOCVD) technique. The samples are characterized via photo luminescence (PL) spectroscopy at room temperature. The effect of the growing temperature of barrier layer、 Ⅴ/Ⅲ ratio of quantum well layer and offcut substrate to emitting wavelength、 PL intensity and full-width at half-maximum (FWHM) is discussed. Samples with lower barrier growing temperature shows higher PL intensity. The PL intensity will increase when the Ⅴ/Ⅲ ratio of quantum well layer decreases, and the PL peak exhibits a red shift at the same time. Samples grown on substrate (100) oriented 15° off towards <111> exhibit the highest PL intensity and narrowest FWHM.