强激光与粒子束, 2014, 26 (4): 045043, 网络出版: 2014-04-24
V掺杂6H-SiC光导开关制备与性能研究
Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch
碳化硅 光导开关 导通电阻 峰值功率 silicon carbide photoconductive semiconductor switch on-state resistance peak power
摘要
采用V掺杂半绝缘6H-SiC单晶衬底材料制备了平面电极型大功率SiC光导开关,用强度为150 μJ/mm2、波长为355 nm的脉冲激光对开关进行触发,在1~14 kV的外加电压范围内对光导开关的耐压特性、导通电阻等性能进行了研究。结果表明: 随着开关外加电压的升高,开关的电流峰值呈现不断增大的趋势,当开关外加电压为14 kV时,电流峰值达185 A,对应的光导开关峰值功率为2.59 MW,开关的导通电阻约为22 Ω。
Abstract
High power photoconductive semiconductor switches (PCSSs) were fabricated on V-doped semi-insulating 6H-SiC single crystal. The 6H-SiC PCSS were measured by applying a bias voltage from 1 kV to 14 kV. The triggered laser was a 355 nm pulse laser with an energy density of 150 μJ/mm2. The peak photocurrent shows an increasing trend with improving the applied voltage. The peak photocurrent running through the PCSS and the calculated on-state resistance are 185 A and about 22 Ω respectively when the applied voltage reaches 14 kV, and the corresponding peak power is 2.59 MW.
周天宇, 刘学超, 代冲冲, 黄维, 施尔畏. V掺杂6H-SiC光导开关制备与性能研究[J]. 强激光与粒子束, 2014, 26(4): 045043. Zhou Tianyu, Liu Xuechao, Dai Chongchong, Huang Wei, Shi Erwei. Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2014, 26(4): 045043.