采用真空热蒸发(VTE)的方法制备了CdS多晶薄膜, 研究了不同衬底温度对其微观结构与光电性能的影响。结果显示, 不同衬底温度下制备的CdS薄膜均属于六方相多晶结构且具有(002)择优取向; 随着衬底温度的升高, (002)特征衍射峰强度增加, 半高宽变小, 相应薄膜结晶度增大; 由CdS薄膜的透射光谱可知, 在500~1000nm波段平均透过率均超过80%, 光学带隙随着衬底温度的升高而增大(2.44~2.56eV), 表明真空热蒸发方法制备的CdS薄膜可以作为CIGS薄膜太阳电池的缓冲层。将真空热蒸发法制备CdS薄膜与磁控溅射法制备CIGS薄膜太阳电池相结合, 在同一真空室内得到了CIGS薄膜太阳电池器件, 为CIGS薄膜太阳电池的工业化推广提供了新途径。

Good quality CdS films were grown by vacuum thermal evaporation (VTE) method. The effects of different substrate temperature on the microstructure and optoelectronic properties of CdS thin films were studied. It is found that the films deposited under different substrate temperature have hexagonal phase polycrystalline structure and a preferential orientation along (002). As the substrate temperature increases, the (002) diffraction peak intensity increases, the corresponding half-width (β) of the films becomes smaller and the films crystallinity increases. The absorption spectra reveal that the films are highly transparent and the optical band gap values are found to be increased in the range of 2.44～2.56eV. The CdS thin films prepared by vacuum thermal evaporation are combined with the magnetron sputtered CIGS thin-film solar cells in the same vacuum chamber and the CIGS thin-film solar cell devices using CIGS thin films are successfully fabricated, providing a new way for promoting the industrialization of CIGS solar cells.