半导体光电, 2014, 35 (2): 286, 网络出版: 2014-04-28
纳米压痕技术控制电迁移现象中铝原子积聚位置研究
Control of Accumulation Positions of Al atoms in Electromigration by Nanoindentation
摘要
在利用电迁移现象制备铝纳米线的过程中, 铝纳米线的生长位置取决于铝原子的积聚位置。为实现铝原子积聚位置控制, 基于纳米压痕技术改变试样中铝膜的横截面结构, 制备了铝膜试样。通过输入并调节直流电大小使铝膜内产生电迁移现象。试验结果表明, 纳米压痕技术可有效提高局部区域的电流密度, 显著增强铝原子的电迁移强度, 并在压痕区域出现铝原子积聚现象。
Abstract
The positions of electromigration induced Al nanowires depend on the accumulation of Al atoms. Nanoindentation was used in Al films to control accumulation of atoms by changing the cross sectional structure of the samples. It is found that the current density is significantly increased in the area wherein nanoindentation test was used, resulting in electromigration increase in the Al films and accumulation of Al atoms.
鹿业波, 王海燕. 纳米压痕技术控制电迁移现象中铝原子积聚位置研究[J]. 半导体光电, 2014, 35(2): 286. LU Yebo, WANG Haiyan. Control of Accumulation Positions of Al atoms in Electromigration by Nanoindentation[J]. Semiconductor Optoelectronics, 2014, 35(2): 286.