利用脉冲恢复技术测量了有限宽基区n+-on-p光电二极管中的少子寿命.实验发现, 反向恢复时间同正、反向电流的大小有关.从恢复时间ts与IF/IR函数关系提取的少子寿命随着基区厚度与少子扩散长度比值降低而明显增大.在77 K时，采用传统方法脉冲回复技术提取的少子寿命为28 ns，而当考虑短基区效应时，所提取的少子寿命为51 ns. 这表明HgCdTe光电二极管的基区厚度与少子扩散长度比值是采用脉冲恢复技术测量少子寿命技术中的一个重要参数.只有当基区厚度大于三倍少子扩散长度时，传统方法中无限基区厚度的假设条件才成立.

An experimental study of the minority carrier lifetime in a finite base HgCdTe n+-on-p photodiode using pulse recovery technique (PRT) is presented in this paper. The reverse recovery storage time (ts) is functions of the forward current IF and reverse current IR. Average minority carrier (electron) lifetimes (τn) calculated from ts and IF/IR strongly increases with decreasing ratio of the base thickness to the diffusion length. The minority carrier (electron) lifetime extracted from the conventional theory is approximately 28 ns at 77 K, much less than the value of 51 ns obtained when short base effects are considered in the analysis. This reveals that the base thickness of the photodiode is an important parameter for the minority carrier lifetime measurement using PRT. The infinite base assumption is valid only if the base thickness is larger than about three times the diffusion length of minority carriers.