采用溶胶-凝胶和旋涂抽滤方法，在硅微通道(Si-MCP)衬底的内壁上涂敷前驱物，然后分别在600 ℃， 650 ℃，700 ℃和750 ℃条件下制备Bi3.15Nd0.85Ti3O12/Si-MCP 微纳薄膜阵列，并对其结构及铁电特性进行表征.研究结果显示，退火温度越高，Si-MCP内被局域化的微纳薄膜结晶颗粒尺寸越大，同时BNT/Si-MCP微纳薄膜阵列越趋向沿c 轴取向，尤其在750 ℃ 下制备的薄膜具有表面形貌均匀和c轴取向程度高等优点，且剩余极化强度可达93.8 μC/cm2.

The micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP (BNT/Si-MCP) ferroelectric thin film arrays were fabricated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the inner wall of Si-MCP. Bi3.15Nd0.85Ti3O12 thin film supported by Si-MCP were prepared via annealing in oxygen atmosphere at 600℃, 650℃, 700℃ and 750℃, respectively. The ferroelectric properties and microstructures of BNT/Si-MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization (93.8 μC/cm2) and lowest leakage current of the micro/nano-scale BNT/Si-MCP arrays were obtained annealing at 750℃.