中国激光, 2014, 41 (6): 0617001, 网络出版: 2014-05-19
利用有源多模干涉器提高InGaN超辐射发光二极管的输出功率
Enhanced Output Power of InGaN Superluminescent Diode Using Active Multi-Mode Interferometer
光学器件 超辐射发光二极管 有源多模干涉器 高功率 optical devices superluminescent diodes active multimode-interferometer high power
摘要
为了提高InGaN超辐射发光二极管(SLED)的输出功率,采用有源多模干涉器(Active-MMI)作为管芯结构制作了Active-MMI SLED。由于有源区注入电流抽运面积的增加,提高了器件的增益饱和水平。实验结果表明,Active-MMI SLED的最大输出功率达到了47 mW,光谱较宽而又平坦(3 dB带宽20 nm)。此外,器件即使在最大输出功率下,仍然保持着稳定的单模输出。
Abstract
To improve the output power of InGaN superluminescent diodes (SLED), an active multimode-interferometer (Active-MMI) configuration has been used to fabricate the Active-MMI SLED. Because of the wider actively pumped area, the output power saturation level has been improved. The experiment results show that the maximum output power of Active-MMI SLED as high as 47 mW is obtained with a wide 3 dB bandwidth of 20 nm and flat spectrum. Moreover, even under the maximum output power of Active-MMI SLED, it still keeps a stable single mode output.
臧志刚, 余健辉, 张军, 陈哲. 利用有源多模干涉器提高InGaN超辐射发光二极管的输出功率[J]. 中国激光, 2014, 41(6): 0617001. Zang Zhigang, Yu Jianhui, Zhang Jun, Chen Zhe. Enhanced Output Power of InGaN Superluminescent Diode Using Active Multi-Mode Interferometer[J]. Chinese Journal of Lasers, 2014, 41(6): 0617001.