以CdS、CdCl2混合物为薄膜材料运用电子束蒸发法，制备了不同比例的CdS掺Cl-薄膜。利用X射线衍射仪（XRD）、四探针测试仪和紫外可见光光谱仪，对所制备薄膜的结构、光学及光电导性能进行了测试。结果表明：采用此方法制备的CdS薄膜为六角纤锌矿结构的多晶薄膜，且具有垂直于基底c轴的（002）晶面优势取向。Cl-掺杂摩尔分数为0.1%时可提高薄膜的结晶性且掺杂浓度变化对光能隙的影响很小，仅变化0.07 eV；其中亮方块电阻最小值为100 Ω/□，光敏性达到了2.9×105。说明经过Cl-的掺杂处理可以明显改善CdS薄膜结晶质量和光学及光电导性能。

The structure，optical and electrical properties of different Cl- concentrations doped CdS thin film deposited by electron beam evaporation using the mixture of CdS and CdCl2 has been investigated by means of X-ray diffraction (XRD), four probe tester and ultraviolet-visible spectroscopy. The results indicate that the films prepared by this method are polycrystalline structure with preferred growth orientation (002) which perpendicular to plinth, known as hexagonal phase, the crystallinity of the samples can be improved when the Cl- doping mole fraction is 0.1% and the influence on the optical energy gap is small，the variation is 0.07 eV. The minimum of the bright resistance is 100 Ω/□ and the photo sensitiveness reaches 2.9×105. In conclusion, the crystallinity, optical and electrical properties of CdS thin films can be improved after the Cl- doping process.