利用射频磁控溅射技术，在相同流量的氮气、氩气混合气体条件下，在石英基片上溅射获得了不同Mg含量的N掺杂MgxZn1-xO薄膜，并研究了Mg含量对N的掺杂行为和薄膜光电性能的影响。结果显示，在N掺杂MgxZn1-xO薄膜中，随着Mg含量的增加，薄膜的电阻率增加，载流子浓度下降；X射线电子能谱中位于395 eV左右的N1s峰强逐渐减弱、甚至消失；Raman光谱中与受主NO相关的位于272 cm-1、642 cm-1左右的振动峰也随之减弱、消失。得到的结果表明:在N和O的化学势相同的条件下，薄膜中Mg含量对N的掺杂行为有一定的影响，随着Mg含量的增加，受主NO的掺杂浓度降低，N的掺杂状态发生变化；N掺杂MgxZn1-xO薄膜中Mg含量低时,存在NO与(N2)O两种状态；Mg含量高时，薄膜中只存在 (N2)O一种形式。

N doped MgZnO films with different Mg contents were prepared on quartz substrates using mixed gases of 99.99% pure nitrogen and argon at the same flow by radio frequency magnetron sputtering technique, respectively. The effects of Mg content on the doping behavior of N and photoelectric properties of these films were studied. The experimental results indicate that the resistivity increases and the carrier concentration decreases for the films as the Mg content increases. In the Xray Photoelectron Spectroscopy(XPS), the N1s peak located near 395 eV is gradually weakened and even disappeared. In the Raman spectra, the peaks of the N for O site (NO) at 272 and 642 cm-1 are also weakened and disappeared with the Mg content increasing. It can be concluded that the doping behavior of N is dominated by the Mg content when N and O are at the same chemical potential in the experiment. With the Mg content increasing, the doping concentration of N for O site (NO) decreases and the chemical state of N is changed. In the film with a low Mg content，N for O site (NO) and N2 for O site (N2)O are coexist, but in the film with a high Mg content, only (N2)O exists.