光学 精密工程, 2014, 22 (5): 1289, 网络出版: 2014-06-03
SiO2/CeO2复合磨粒的制备及在蓝宝石晶片抛光中的应用
Preparation of nano SiO2 /CeO2 composite particles and their applications to CMP on sapphire substrates
蓝宝石晶片 化学机械抛光 表面粗糙度 复合磨料 sapphire substrate chemical mechanical polish surface roughness SiO2/CeO2 SiO2/CeO2 composite abrasive
摘要
采用均相沉淀法制备了SiO2/CeO2复合磨料,并利用X 射线衍射仪(XRD)、透射电子显微镜(TEM)、傅里叶变换红外光谱仪(FTIR)等对样品的相组成和形貌进行了表征。将所制备的SiO2/CeO2复合磨料用于蓝宝石晶片的化学机械抛光,利用原子力显微镜检测抛光后的蓝宝石晶片表面粗糙度。结果表明:所制备的SiO2/CeO2复合磨粒呈球形,粒径在4050 nm;在相同条件下,经过复合磨料抛光后的蓝宝石晶片表面粗糙度为0.32 nm,材料去除速率为16.4 nm/min,而SiO2抛光后的蓝宝石晶片表面粗糙度为0.92 nm,材料去除速率为20.1 nm/min。实验显示,复合磨料的材料去除速率略低于单一SiO2磨料,但它获得了较好的表面质量,基本满足蓝宝石作发光二极管(LED)衬底的工艺要求。
Abstract
SiO2/CeO2 composite abrasives were synthesized by homogenous precipitation method. The phase composition and morphology of the asprepared composite nanospheres were characterized by a Xray Diffractomer(XRD), a Transmission Electron Microscopy(TEM), and a Fourier Transfer Infrared( FTIR) spectrometer. The asprepared composite nanospheres were used as polishing abrasives for Chemical Mechanical Polishing (CMP) of a sapphire substrate, then the surface roughness of sapphire substrate after polishing with the composite abrasive slurry was measured by a Atomic Force Microscopy(AFM). The results show that the average roughness of the polished sapphire substrate is 0.32 nm and the material removal rate is 16.4 nm/min for composite abrasives,however, those are 0.92 nm and 20.1 nm/min for SiO2 abrasive. It demonstrates that the material removal rate of composite abrasives is less than that of the SiO2, but it has a good surface quality. These results mean that the SiO2/CeO2 composite satisfies the technical requirements for sapphire Light Emission Diode(LED) substrates.
白林山, 熊伟, 储向峰, 董永平, 张王兵. SiO2/CeO2复合磨粒的制备及在蓝宝石晶片抛光中的应用[J]. 光学 精密工程, 2014, 22(5): 1289. BAI Lin-shan, XIONG Wei, CHU Xiang-feng, DONG Yong-ping, Zhang Wang-bing. Preparation of nano SiO2 /CeO2 composite particles and their applications to CMP on sapphire substrates[J]. Optics and Precision Engineering, 2014, 22(5): 1289.