光子学报, 2014, 43 (5): 0531002, 网络出版: 2014-06-03   

BaTiO3晶体薄膜PLD法生长工艺参量研究

Growth Process Parameters of BaTiO3 Crystal Thin Film in PLD Method
作者单位
1 长春理工大学, 长春 130022
2 中国科学院长春光学精密机械与物理研究所, 长春 130033
3 哈尔滨工业大学, 哈尔滨 150001
摘要
采用脉冲激光沉积方法在单晶MgO基片上外延生长了BaTiO3晶体薄膜.为改善薄膜的结晶质量和表面粗糙度, 研究并优化了生长工艺中生长温度和激光能量两个参量, 并对薄膜样片实行原位退火.找到了BaTiO3薄膜在优先方向上的结晶效果, 分析了结晶质量对生长温度的依赖关系和不同激光能量对结晶薄膜的表面粗糙度的影响.利用X射线衍射仪测定结晶效果与特性, 原子力显微镜表征BaTiO3薄膜的结晶表面形貌与粗糙度.测试结果表明, 在c轴取向生长BaTiO3薄膜, 在(001)和(002)方向上都出现强度很高的尖锐衍射峰, 具有较好的结晶质量和较小的表面粗糙度, 原子力显微镜测定出薄膜的表面粗糙度为0.563 nm.
Abstract
BaTiO3 (BTO) waveguide thin films were prepared by pulsed laser deposition (PLD) on single crystal MgO substrate. In order to improve the crystalline quality and surface roughness, two process parameters of growth temperature and laser energy were studied and optimized, and the film sample was conducted in-situ annealing. The crystallization effect of BTO thin film was found in the first direction. The dependent relations of quality characteristics and growth temperature were analyzed, and the effects of different laser energy on the crystalline film surface roughness were studied. The crystallization effect and characteristic of the film were characterized by X-ray diffraction. The surface morphology and roughness were detected by atomic force microscopy. The results indicate that BTO film could be c-axial oriented film. High strength sharp diffraction peak appeared in the direction of (001) and (002). The film has good crystal quality and small surface roughness of 0.563 nm.

张静, 付秀华, 杨飞, 杨彬, 孙德贵. BaTiO3晶体薄膜PLD法生长工艺参量研究[J]. 光子学报, 2014, 43(5): 0531002. ZHANG Jing, FU Xiu-hua, YANG Fei, YANG Bin, SUN De-gui. Growth Process Parameters of BaTiO3 Crystal Thin Film in PLD Method[J]. ACTA PHOTONICA SINICA, 2014, 43(5): 0531002.

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