红外技术, 2014, 36 (5): 415, 网络出版: 2014-06-03
InP基PIN型探测器中接触层掺杂对In0.53Ga0.47As材料光致发光特性的影响
The Influences of Contact Layer Doping on the PL Spectrum Properties of In0.53Ga0.47As Materials in InP Base PIN Detector
摘要
利用 MOCVD在 InP衬底上制备 InP/In0.53Ga0.47As/InP双异质结 PIN型材料, 通过对本征层 In0.53Ga0.47As材料的光致荧光谱研究, 发现 PIN结构中两侧 InP材料的掺杂特性对中间 In0.53Ga0.47As材料的光致发光特性有明显的影响。本文通过对两侧 InP材料的变掺杂处理, 实现了 In0.53Ga0.47As材料光致发光特性的有效提高。
Abstract
InP/In0.53Ga0.47As/InP double heterojunction were grown by metalorganic chemical vapor deposition on InP substrate. Based on the intrinsic layer of In0.53Ga0.47As material photoluminescence spectrum measurement, that can be observed the doping characteristics of the InP layer in PIN structure had a significant impact on the PL spectrum properties of In0.53Ga0.47As layer. In this paper, the varied doping methods on both sides of the InP layer were suggested to improve the PL spectrum properties of In0.53Ga0.47As layer effectively.
吴波, 邓军, 杨利鹏, 田迎, 韩军, 李建军, 史衍丽. InP基PIN型探测器中接触层掺杂对In0.53Ga0.47As材料光致发光特性的影响[J]. 红外技术, 2014, 36(5): 415. WU Bo, DENG Jun, YANG Li-peng, TIAN Ying, HAN Jun, LI Jian-jun, SHI Yan-li. The Influences of Contact Layer Doping on the PL Spectrum Properties of In0.53Ga0.47As Materials in InP Base PIN Detector[J]. Infrared Technology, 2014, 36(5): 415.
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