采用Silvaco TCAD软件,对P+-P-N-N+SOS结构输出脉冲宽度的参数影响规律进行了一维数值模拟研究,包括N+区扩散深度、有效横截面积、外电路参数等。模拟结果表明：随着N+区扩散深度、有效横截面积的增加和外电路电阻的增大,输出脉冲的宽度减小。通过参数优化,获得了脉宽约为4 ns的输出脉冲。

The influences of key parameters on the width of output pulses generated by a semiconductor opening switch (SOS) with p+-p-n-n+ structure were numerically studied using Silvaco TCAD tools, including diffusion depth of n+ region, effective cross-sectional area, external circuit parameters, etc. The simulation results show that the width of output pulses decrease with the increasing of the diffusion depth of n+ region, effective cross-sectional area and the resistance of external circuits. After a series of parameter optimizations, the output pulse with 4 ns width could be obtained.