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N2流量对N掺杂MgZnO薄膜结构和性能的影响

Effects of N2 Flux Ratio on The Structure and Properties of MgZnO∶N Films

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摘要

利用射频磁控溅射方法, 使用Mg0. 04Zn0.96O 陶瓷靶材,选用不同流量比的氮气和氩气混和气体作为溅射气体, 在石英基片上生长N掺杂MgxZn1-xO合金薄膜。研究了氮流量比对薄膜组分、结构、形貌、电学性质和拉曼光谱的影响。结果显示:随着溅射气氛中氮流量比的增加, 薄膜中Mg含量增加, 薄膜表面颗粒尺寸减小, 结晶质量变差, 电阻率逐渐增大, 导电类型发生转变。在氮流量比为20%时, 获得了最好的p型导电薄膜。另外, 随着氮流量比的增加, 拉曼光谱中与NO相关的位于272 cm-1、642 cm-1左右的振动峰逐渐增强, 表明NO的浓度随着氮流量比的加大而有所增加。

Abstract

Using Mg0.04Zn0.96O target, N doped MgZnO films were prepared on quartz substrate by radio frequency magnetron sputtering technique. The effects of N2/(N2+Ar) flux ratio on the morphology, structure and properties of annealed MgZnO thin films were investigated. With the increasing flux ratio of N2/(N2+Ar), the content of Mg increases, the average grain size becomes smaller, the crystal quality degrades, the resistivity increases, and the conductivity of the film changes. When the flux ratio of N2/(N2+Ar) is 20%, the MgZnO∶N film behaves the best p-type conductivity property. Furthermore, the Raman peaks of the N for O site (NO) at 272 and 642 cm-1 become stronger with the flux ratio of N2/(N2+Ar) increasing. It can be concluded that the doping concentration of N for O site (NO) increases with the flux ratio of N2/(N2+Ar) increasing.

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中图分类号:O484.4;O472

DOI:10.3788/fgxb20143506.0689

所属栏目:材料合成及性能

基金项目:国家自然科学基金(11274135); 吉林省教育厅“十二五”科学技术研究项目(2013189)资助

收稿日期:2014-02-26

修改稿日期:2014-04-12

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高丽丽:北华大学 物理学院, 吉林 吉林132013吉林大学 物理学院, 吉林 长春130012
李永峰:吉林大学 物理学院, 吉林 长春130012
徐莹:吉林大学 物理学院, 吉林 长春130012
张淼:北华大学 物理学院, 吉林 吉林132013
姚斌:吉林大学 物理学院, 吉林 长春130012

联系人作者:高丽丽(gaolili000@sina.com)

备注:高丽丽 (1972-), 女, 吉林省吉林市人, 博士, 副教授, 2011年于吉林大学获得博士学位, 主要从事半导体光电材料方面的研究。

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引用该论文

GAO Li-li,LI Yong-feng,XU Ying,ZHANG Miao,YAO Bin. Effects of N2 Flux Ratio on The Structure and Properties of MgZnO∶N Films[J]. Chinese Journal of Luminescence, 2014, 35(6): 689-694

高丽丽,李永峰,徐莹,张淼,姚斌. N2流量对N掺杂MgZnO薄膜结构和性能的影响[J]. 发光学报, 2014, 35(6): 689-694

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