针对始终处于加电状态工作模式的半导体激光器，通过分析单个粒子对器件的辐射过程，将空间辐射效应离散的描述为所有单粒子造成辐射效应的累积。考虑到粒子到达服从泊松过程的特点，建立了半导体激光器空间辐射效应性能退化模型。推导了器件可靠度函数以及平均故障前时间的表达式。对InGaAs多量子阱激光二极管在高轨空间辐射环境中的性能退化过程进行了仿真，得到了器件的光功率退化曲线。结果表明光功率退化量与辐射时间近似成正比例关系。由此提出了同时考虑辐射与退火效应条件下，器件的光功率退化速率，通过拟合得出该速率与空间辐射平均剂量率成正比。获得了半导体激光器的可靠度曲线，进而计算了器件的平均故障前时间。

For lasers which are working in the changing state all the time, the process of single particle radiation on semiconductor laser is analysed, and space radiation effect is described as the cumulation of radiation effects caused by single particles. In consideration of the characteristic that the arrival of particles is a Poisson process, the performance degradation model of space irradiated semiconductor laser is established. Expressions of reliability and mean time to failure are educed. The performance degradation process of multi-quantum well semicondyctor laser in high-orbit space radiation environment is simulated using existing data, and curves of degradated optical power are obtained. Results show that degradated optical power is in direct proportion to radiating time. Therefore, taking into account of both radiation effects and annealing effect, the degenerate rate of optical power is put forward, which is in direct proportional to the average radiating dose of space radiation environment calculated by fitting. Reliability curves are achieved and the mean time to failure for device is calculated.