半导体光电, 2014, 35 (4): 614, 网络出版: 2014-09-01
二氧化硅纳米花的制备及发光特性研究
Study on Fabrication of SiO2 Nanoflower and Its Luminescent Behaviors
摘要
采用磁控溅射和化学气相沉积技术制备出二氧化硅纳米花。利用扫描电子显微镜(SEM), X射线光电子能谱(XPS)和傅里叶红外吸收谱(FTIR)对上述纳米结构进行结构表征。用荧光光谱仪(PL)对其光致发光特性进行了研究。结果表明在激发波长为325nm时, 在394nm处出现一个发光峰, 表现出良好的发光特性。
Abstract
SiO2 nanoflowers were prepared by radio frequency sputtering technique and chemical vapor deposition (CVD). The prepared nanocomposites were characterized by scanning electron microscopy (SEM), Xray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). And also the luminescent behavior of the nanocomposite films was characterized by photoluminescence (PL). An intensively emission peak at around 394nm was observed with the excitation wavelength at 325nm.
李玉国, 刘永峰, 王玉萍, 王宇, 方香. 二氧化硅纳米花的制备及发光特性研究[J]. 半导体光电, 2014, 35(4): 614. LI Yuguo, LIU Yongfeng, WANG Yuping, WANG Yu, FANG Xiang. Study on Fabrication of SiO2 Nanoflower and Its Luminescent Behaviors[J]. Semiconductor Optoelectronics, 2014, 35(4): 614.
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