对GaN基绿光高压LED分别施加-500、-1 000、-2 000、-3 000、-4 000、-5 000和-6 000 V的反向人体模式静电打击, 每次静电打击后, 测量样品的I-V特性曲线及光通量等参量, 研究静电打击对GaN基高压LED器件性能的影响.结果表明: 当样品经过-500, -1 000、-2 000、-3 000和-4 000 V的静电打击后, 由于LED器件内部产生了缺陷, 发生了软击穿并且反向漏电流明显增加, 但光通量的变化不明显；当经过-5 000 V和-6 000 V的静电打击后, 由于发生了热模式击穿, 温度迅速升高, 在结区形成熔融通道, 使LED的光通量明显减小, 甚至衰减到未打击时的一半；在经受-6 000 V的静电打击后, 正向电压的减小和反向漏电流的增加更加明显, 漏电现象更加明显, 严重影响了器件的性能, 最终使LED样品失效.

GaN-based high-voltage green light-emitting diodes were biased by negative Human-Body-Mode electrostatic discharge (ESD) with -500,-1 000,-2 000,-3 000,-4 000,-5 000 and -6 000 V.The I-V characteristic and luminous flux under different electrostatic shock voltages were comparative analyzed after each shock.The results show that the LED has a soft breakdown which accompanied with apparent increased reverse leakage current and unapparent luminous flux change ,which due to the generation of defect after ESD stressing at -500,-1 000,-2 000,-3 000 and -4 000V;When the device was biased to -5 000 V and -6 000 V,a sharp decrease of luminous flux appears,even decay to 50% of light output than before stressing.And forward voltage and reverse leakage current show a large degree of decrease and increase respectively after ESD shock of -6000V,which is due to the thermal model breakdown at this moment.The thermal model breakdown make temperature rise rapidly and form a melting channel,which disabled the LED eventually.