采用阻性肖特基势垒二极管UMS DBES105a设计了一个太赫兹三倍频器.为了提高功率容量和倍频效率，该倍频器采用反向并联二极管对结构实现平衡式倍频.根据S参数测试曲线建立了该二极管的等效电路模型并提取了模型参数.由于在太赫兹频段二极管的封装影响到电路的场分布，将传统的二极管SPICE 参数直接应用于太赫兹频段的电路设计存在一定缺陷，因此还建立了二极管的三维电磁模型.基于该模型研制出的220 GHz三倍频器最大输出功率为1.7 mW, 最小倍频损耗为17.5 dB ，在223.5 GHz~237 GHz输出频率范围内，倍频损耗小于22 dB .

A terahertz frequency tripler using resistive Schottky barrier diodes UMS DBES105a was designed. To enhance power capacity and improve conversion efficiency, an anti-parallel diode pair has been used to realize balanced multiplier structure. The equivalent circuit model of the diode has been built and the component parameters were obtained based on the measured results of S parameters. At terahertz band, the field distribution in circuit is seriously affected by the package of diodes. It means that it is not a good way using the traditional method that directly applying SPICE parameters to the field of terahertz. Therefore the electromagnetic model of diodes has also been built. A 220 GHz frequency tripler was fabricated based on the model of diodes. The maximum output power is 1.7 mW and the minimum conversion loss is 17.5 dB. The conversion loss is less than 22 dB from 223.5 GHz to 237 GHz.