采用操作简单的溶胶-凝胶法和射频磁控溅射法在石英衬底上分别制备了MgxZn1-xO薄膜和MgxZn1-xO/Au/MgxZn1-xO夹层结构的透明导电薄膜并对样品进行退火处理。 利用紫外-可见分光光度计、 X射线衍射仪、 光致发光、 霍尔效应测试对在不同退火温度下薄膜的晶体结构、 光学和电学性质进行表征分析, 并研究退火温度对其影响。 测试结果表明: 所制备的薄膜样品均具有良好的c轴(c-axis)取向并呈现出六角纤锌矿结构。 Mg组分的增加使得ZnO基薄膜的光学带隙逐渐增大, PL发光谱和吸收光谱的谱线出现了明显的蓝移现象, 但薄膜的电学特性有所降低。 而在MgxZn1-xO/Au/MgxZn1-xO夹层结构的薄膜样品中, Au夹层的存在使薄膜的光学性质变差, 在紫外区域透光率约为60%。 但薄膜的电学性质得到明显改善, 相比MgxZn1-xO薄膜, 其电阻率和迁移率显著提高。 此外通过高温退火处理可以有效提高所制备薄膜的晶体质量, 进一步提高样品电学特性, 其中经过500 ℃退火后的薄膜迁移率达到了40.9 cm2·Vs-1, 电阻率为0.005 7 Ω·cm。 但随着退火温度的进一步升高, 薄膜晶体尺寸从25.1 nm增大到32.4 nm, 从而降低了该薄膜的迁移率。 因此该夹层结构的MgxZn1-xO/Au/MgxZn1-xO薄膜对于促进ZnO基透明导电薄膜在深紫外光学器件中的应用有重要作用。

In the present paper, MgxZn1-xO and MgxZn1-xO/Au/MgxZn1-xO multilayer structures of transparent conductive film were prepared by the simple operation of sol-gel and RF magnetron sputtering method on quartz substrate respectively and then they were annealed. The surface, electrical, crystal and optical properties of the films at different annealing temperature were determined by UV-Vis spectrophotometer, X-ray diffraction, photoluminescence and Hall effect, respectively. The influence of annealing temperature on the films was also investigated. The testing results indicated that the films with good c-axis orientation presented hexagonal wurtzite structure. With increasing Mg components, the optical band gap of ZnO thin film increased gradually. There was an obvious blue shift phenomenon in PL spectrum and absorption spectrum line. But the electrical properties of the films declined. In MgxZn1-xO/Au/MgxZn1-xO multilayer structure of thin film samples, the existence of Au interlining led to the poor optical properties of thin film, and the light transmittance in the ultraviolet region was 60%. Compared with MgxZn1-xO film, the electrical properties of MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film were improved, the resistivity and migration rate were significantly increased. In addition, high temperature annealing treatment could effectively improve the crystal quality of thin film and further improve the electrical characteristics of the samples. After the annealing treatment at 500 ℃, migration rate of the film reached to 40.9 cm2·Vs-1 while the resistivity was 0.005 7 Ω·cm. Due to the rising of temperature, the crystal size increased from 25.1 to 32.4 nm to reduce the mobility of the film. Therefore, MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film played an important role in promoting the ZnO transparent conductive film application in deep ultraviolet devices.