在考虑线性损耗的情况下,对硅基纳米波导中皮秒脉冲传输交叉相位调制不稳定性进行了仿真研究。采用微扰和线性稳定性分析方法,理论推导了调制不稳定性产生所满足的色散关系和调制不稳定性增益谱表达式。分析了脉冲光功率、线性损耗和群速度色散系数等参量对交叉相位调制不稳定性的影响,并进行了仿真分析。结果表明,即使在微弱的入射光功率下,仍然存在强烈的交叉相位调制不稳定性现象;交叉相位调制不稳定性不仅可以在反常色散区出现,而且在正常色散区也会发生。波导的线性损耗对交叉相位调制不稳定性增益谱有明显影响。

Taking into account the linear loss of silicon nanometer waveguide, cross-phase modulation instability(XPMI) induced by picosecond pulse propagation in silicon nanometer waveguide is investigated. The dispersion relation and gain spectra expression of XPMI are deduced theoretically based on perturbation theory and linear stability analysis method. Impacts of various parameters to gain spectra of XPMI are analyzed theoretically and simulated in details. Both theoretical analysis and simulation show that strong MI takes place even in the existence of low light power. The XPMI can take place not only in abnormalous dispersion region but also in normal dispersion region. Linear loss of waveguide affects the gain spectra of XPMI obviously.